DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

S-818A30AMC-BGKT2G View Datasheet(PDF) - Seiko Instruments Inc

Part Name
Description
Manufacturer
S-818A30AMC-BGKT2G
SII
Seiko Instruments Inc 
S-818A30AMC-BGKT2G Datasheet PDF : 32 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
LOW DROPOUT CMOS VOLTAGE REGULATOR
S-818 Series
Rev.2.1_00
4. Load fluctuation
30mA
IOUT=10µA30mA VIN=4V
30mA
IOUT=30mA10µA VIN=4V
10µA
3V
IOUT
VOUT
CL=2µF
10µA
IOUT
3V
CL=2µF
CL=4.7µF
CL=4.7µF
VOUT
TIME(50µsec/div)
TIME(20msec/div)
Load current dependence of load fluctuation overshoot
VIN=VOUT(S)+1 V, CL=2 µF
1.0
0.8
5V
0.6
3V
CL dependence of overshoot
VIN=VOUT(S),+1 V, IOUT=30 mA10 µA
0.2
0.15
VOUT=2 V
3V
0.4
0.1
0.2
VOUT=2 V
5V
0.05
0.0
1.E03
1.E02
1.E01
IOUT [A]
1.E+00
0
1
10
100
CL [µF]
Remark IOUT shows larger load current at load current
fluctuation while smaller current is fixed to
10 µA. For example IOUT=1.E02 (A) means
load current fluctuation from 10 mA to 10 µA.
VDD dependencies of overshoot
VIN=VDD, IOUT=30 mA10 µA, CL=2 µF
0.3
3V
0.2
0.1
0
0
VOUT=2 V
5V
2
4
6
8
10
VDD [V]
Temperature dependence of overshoot
VIN=VOUT(S)+1 V, IOUT=30 mA10 µA, CL=2 µF
0.3
0.25
0.2
3V
0.15
0.1
0.05
VOUT=2 V
5V
0
50
0
50
100
Ta [°C]
24
Seiko Instruments Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]