ATSAM4LS4BA-AU View Datasheet(PDF) - Atmel Corporation

Part Name

Description

Manufacturer

ATSAM4LS4BA-AU

ATSAM ARM-based Flash MCU

Atmel Corporation 

ATSAM4L8/L4/L2

Table 9-20. High Drive TWI Pin Characteristics in GPIO configuration (1)

Symbol

RPULLUP

RPULLDOWN

VIL

VIH

VOL

VOH

IOL

IOH

tRISE

Parameter

Pull-up resistance (2)

Pull-up resistance(2)

Input low-level voltage

Input high-level voltage

Output low-level voltage

Output high-level voltage

Output low-level current (3)

Output high-level current(3)

Rise time(2)

Conditions

ODCR0=0

ODCR0=1

ODCR0=0

ODCR0=1

OSRR0=0

OSRR0=1

OSRR0=0

OSRR0=1

1.68V<VVDD<2.7V

2.7V<VVDD<3.6V

1.68V<VVDD<2.7V

2.7V<VVDD<3.6V

1.68V<VVDD<2.7V

2.7V<VVDD<3.6V

1.68V<VVDD<2.7V

2.7V<VVDD<3.6V

ODCR0=0

1.68V<VVDD<2.7 V,

Cload = 25pF

ODCR0=0

2.7V<VVDD<3.6 V,

Cload = 25pF

Min

Typ

Max

Units

40

kΩ

40

kΩ

-0.3

0.8 * VVDD

0.2 * VVDD

VVDD + 0.3

V

0.4

VVDD - 0.4

3.4

mA

6

5.2

mA

8

3.4

mA

6

5.2

mA

8

18

ns

110

10

ns

50

tFALL

Fall time(2)

OSRR0=0

OSRR0=1

OSRR0=0

OSRR0=1

ODCR0=0

1.68V<VVDD<2.7 V,

Cload = 25pF

ODCR0=0

2.7V<VVDD<3.6 V,

Cload = 25pF

19

ns

140

12

ns

63

1.

VVDD corresponds to either VVDDIN or VVDDIO, depending on the supply for the pin. Refer to Section 3-5 on page 13 for details

2.

These values are based on simulation. These values are not covered by test limits in production or characterization

3.

These values are based on characterization. These values are not covered by test limits in production

Table 9-21. Common High Drive TWI Pin Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Units

ILEAK

CIN

Input leakage current (1)

Input capacitance(1)

Pull-up resistors disabled

0.01

2

µA

10

pF

1.

These values are based on simulation. These values are not covered by test limits in production or characterization

42023GS–SAM–03/2014

120

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