SD2931-10W(2012) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
SD2931-10W Datasheet PDF : 19 Pages
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SD2931-10
RF power transistor:
HF/VHF/UHF N-channel power MOSFETs
Datasheet — production data
Features
■ Gold metallization
■ Excellent thermal stability
■ Common source configuration
■ POUT = 150 W min. with 14 dB gain @ 175 MHz
■ Thermally enhanced packaging for lower
junction temperatures
Description
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
M174
Epoxy sealed
Figure 1. Pin connection
4
1
3
1. Drain
2. Source
Table 1. Device summary
Order code
Marking
Base qty.
Package
SD2931-10W
SD2931-10
25 pcs
M174
1. For more details please refer to Chapter 11: Marking, packing and shipping specifications.
2
3. Gate
4. Source
Packaging(1)
Plastic tray
December 2012
This is information on a product in full production.
Doc ID 7076 Rev 9
1/19
www.st.com
19
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