Si3232
Table 6. Monitor ADC Characteristics
(VDD, VDD1–VDD4 = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Resolution
—
8
—
Bits
Differential Nonlinearity
DNL
—
±0.75
—
LSB
–1.0
—
+1.5
LSB
Integral Nonlinearity
INL
—
±0.6
±1.5
LSB
Gain Error
—
±0.1
±0.25 LSB
Table 7. Si3200 Characteristics
(VDD = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
TIP/RING Pulldown Transistor
VCM
Saturation Voltage
TIP/RING Pullup Transistor
VOV
Saturation Voltage
Battery Switch Saturation
Impedance
RSAT
OPEN State TIP/RING Leakage
ILKG
Current
Internal Blocking Diode Forward
VF
Voltage
Notes:
1. VAC = 2.5 VPK, RLOAD = 600 Ω.
2. IOUT = 60 mA
VRING – VBAT (Forward),
VTIP – VBAT (Reverse)
ILIM = 22 mA, IABIAS = 4 mA1
⎯
ILIM = 45 mA, IABIAS = 16 mA1 ⎯
GND – VTIP (Forward)
GND – VRING (Reverse)
ILIM = 22 mA1
⎯
ILIM = 45 mA1
⎯
(VBAT – VBATH)/IOUT (Note 2)
⎯
RL = 0 Ω
⎯
VBAT – VBATL (Note 2)
⎯
Typ Max
3⎯
4—
3⎯
4—
15 ⎯
⎯ 100
0.8 ⎯
Unit
V
V
V
V
W
µA
V
Preliminary Rev. 0.96
11