Si3233
SDCH
SDCL
VDC
F1
R191
Note 1 R181
R201
C252
10µF
C142
0.1µF
DCFF
DCDRV
NC
R22
C27
22
470pF
M1
IRLL014N
R17
200k
1
2
D1
ES1D
36
4 10
T11
Note 1
C9
10µF
VBAT
Notes:
GND
1. Values and configurations for these components can be derived from
Table 18 or from App Note 45.
2. Voltage rating for C14 and C25 must be greater than VDC.
Figure 5. Si3233M MOSFET/Transformer DC-DC Converter Circuit
Table 13. Si3233M MOSFET/Transformer DC-DC Converter Component Values
Component(s)
Value
C9
10 µF, 100 V, Electrolytic, ±20%, low ESR (tan(δ) < 0.08)
Supplier
Panasonic
C14*
0.1 µF, X7R, ±20%
Murata, Johanson, Novacap, Venkel
C25*
10 µF, Electrolytic, ±20%, low ESR (tan(δ) < 0.08)
Panasonic
C27
470 pF, 100 V, X7R, ±20%
Murata, Johanson, Novacap, Venkel
R17
200 kΩ, 1/10 W, ±5%
R18
1/4 W, ±5% (See AN45 or Table 21 for value selection)
R19,R20
1/10 W, ±1% (See AN45 or Table 21
for value selection)
R22
22 Ω, 1/10 W, ±5%
F1
Fuse
Belfuse SSQ Series
D1
Ultra Fast Recovery 200 V, 1A Rectifier
General Semi ES1D; Central Semi
CMR1U-02
T1
Power Transformer
Coiltronic CTX01-15275;
Datatronics SM76315;
Midcom 31353R-02
M1
100 V, Logic Level Input MOSFET
Intl Rect. IRLL014N; Intersil
HUF76609D3S; ST Micro
STD5NE10L, STN2NE10L
*Note: Voltage rating of this device must be greater than VDC.
14
Preliminary Rev. 0.5