MX29F100TTC-70 View Datasheet(PDF) - Macronix International

Part Name

Description

Manufacturer

MX29F100TTC-70

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

Macronix International 

READ TIMING WAVEFORMS

VIH

A0~15

VIL

VIH

CE

VIL

WE

VIH

VIL

OE

VIH

VIL

DATA

Q0~7

VOH HIGH Z

VOL

MX29F100T/B

ADD Valid

tCE

tOE

tACC

tDF

tOH

DATA Valid

HIGH Z

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC, VCC = 5V ± 10%(VCC = 5V ± 5% for 29F100T/B-55)

SYMBOL

PARAMETER

MIN.

TYP

MAX.

UNIT CONDITIONS

ICC1 (Read) Operating VCC Current

40

mA IOUT=0mA, f=5MHz

ICC2

50

mA IOUT=0mA, F=10MHz

ICC3 (Program)

50

mA In Programming

ICC4 (Erase)

50

mA In Erase

ICCES

VCC Erase Suspend Current

2

mA CE=VIH, Erase Suspended

NOTES:

1. VIL min. = -0.6V for pulse width is equal to or less than 20ns.

2. If VIH is over the specified maximum value, programming operation cannot be guranteed.

3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is the sum of

ICCES and ICC1 or ICC2.

4. All current are in RMS unless otherwise noted.

P/N:PM0548

REV. 1.2, NOV. 12, 2001

21

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