SST29LE010A-120-4C-P2 View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

Manufacturer

SST29LE010A-120-4C-P2

1 Mbit (128K x8) Page-Mode EEPROM

Silicon Storage Technology 

1 Megabit Page Mode EEPROM

SST29EE010A / SST29LE010A / SST29VE010A

TABLE 7: POWER-UP TIMINGS

Symbol

Parameter

TPU-READ(1)

TPU-WRITE(1)

Power-up to Read Operation

Power-up to Write Operation

Maximum

100

5

Units

µs

1

ms

303 PGM T7.0

2

TABLE 8: CAPACITANCE (Ta = 25 °C, f=1 MHz, other pins open)

Parameter

Description

Test Condition

Maximum

3

CI/O(1)

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN(1)

Input Capacitance

VIN = 0V

6 pF

303 PGM T8.0

4

Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

5

TABLE 9: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

6

NEND

TDR(1)

VZAP_HBM(1)

VZAP_MM(1)

ILTH(1)

Endurance

Data Retention

ESD Susceptibility

Human Body Model

ESD Susceptibility

Machine Model

Latch Up

10,000

100

2000

200

100

Cycles JEDEC Standard A117

Years JEDEC Standard A103

7

Volts JEDEC Standard A114

Volts JEDEC Standard A115

8

mA JEDEC Standard 78

303 PGM T9.2

9

Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

10

11

12

13

14

15

16

© 1999 Silicon Storage Technology, Inc.

9

303-01 2/99

Share Link: