SST34HF1621C-70-4E-L1SE View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
Manufacturer
SST34HF1621C-70-4E-L1SE
Silicon Storage Technology
SST34HF1621C-70-4E-L1SE Datasheet PDF : 38 Pages
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16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
SST34HF1621C / SST34HF1641C
Data Sheet
TABLE 6: CFI QUERY IDENTIFICATION STRING1
Address
x16 Mode
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Address
x8 Mode
20H
22H
24H
26H
28H
2AH
2CH
2EH
30H
32H
34H
Data2
0051H
0052H
0059H
001H
007H
0000H
0000H
0000H
0000H
0000H
0000H
Description
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exits)
Address for Alternate OEM extended Table (00H - none exits)
1. Refer to CFI publication 100 for more details.
2. In x8 mode only the lower byte of data is output.
T6.0 1252
TABLE 7: SYSTEM INTERFACE INFORMATION
Address Address
x16 Mode x8 Mode
Data1 Description
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
36H
38H
3AH
3CH
3EHh
40H
42H
44H
46H
48H
4AH
4CH
0027H
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
VDD Min (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 Millivolts
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 Millivolts
VDD Min (00H = No VDD pin)
VDD Max (00H = No VDD pin)
Typical time out for Program 2N µs (24 = 16 µs)
Typical time out for min size buffer program 2N µs (00H = not supported)
Typical time out for individual Sector-/Block-Erase 2N ms (2N = 16 ms)
Typical time out for Chip-Erase 2N ms (26 = 64 ms)
Maximum time out for Program 2N time typical (21 x 24 - 32 µs)
Maximum time out for buffer program 2N time typical
Maximum time out for individual Sector-Block-Erase 2N time typical (21 x 24 - 32 ms)
Maximum time out for individual Chip-Erase 2N time typical (21 x 26 - 128 ms)
1. In x8 mode, only the lower byte of data is output.
T7.0 1252
©2006 Silicon Storage Technology, Inc.
14
S71252-03-000
8/06
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