SST34HF1621C-70-4E-L1PE View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
Manufacturer
SST34HF1621C-70-4E-L1PE
Silicon Storage Technology
SST34HF1621C-70-4E-L1PE Datasheet PDF : 38 Pages
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16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory
SST34HF1621C / SST34HF1641C
Data Sheet
TABLE 12: Flash Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
TDR1
Endurance
Data Retention
10,000
100
Cycles JEDEC Standard A117
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T12.0 1252
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
AC CHARACTERISTICS
TABLE 13: SRAM Read Cycle Timing Parameters
Min
Max
Units
TRCS
TAAS
TBES
Read Cycle Time
Address Access Time
Bank Enable Access Time
70
ns
70
ns
70
ns
TOES
TBYES
TBLZS1
TOLZS1
TBYLZS1
TBHZS1
TOHZS1
TBYHZS1
TOHS
Output Enable Access Time
UBS#, LBS# Access Time
BES# to Active Output
Output Enable to Active Output
UBS#, LBS# to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
UBS#, LBS# to High-Z Output
Output Hold from Address Change
35
ns
70
ns
0
ns
0
ns
0
ns
25
ns
25
ns
35
ns
10
ns
T13.0 1252
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 14: SRAM Write Cycle Timing Parameters
Symbol
TWCS
TBWS
TAWS
TASTS
TWPS
TWRS
TBYWS
TODWS
TOEWS
TDSS
TDHS
Parameter
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
UBS#, LBS# to End-of-Write
Output Disable from WE# Low
Output Enable from WE# High
Data Set-up Time
Data Hold from Write Time
Min
Max
Units
70
ns
60
ns
60
ns
0
ns
60
ns
0
ns
50
ns
30
ns
0
ns
30
ns
0
ns
T14.0 1252
©2006 Silicon Storage Technology, Inc.
18
S71252-03-000
8/06
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