PIC16C64A/JW View Datasheet(PDF) - Microchip Technology
Part Name
Description
Manufacturer
PIC16C64A/JW Datasheet PDF : 108 Pages
| |||
PIC16C62X
12.1 DC CHARACTERISTICS:
PIC16C62X-04 (Commercial, Industrial, Extended)
PIC16C62X-20 (Commercial, Industrial, Extended)
Param Sym
No.
D001 Vdd
D001A
D002 Vdr
D003 Vpor
D004 Svdd
D005 VBOR
D010 Idd
D010A
D013
D020 Ipd
D023
∆IWDT
∆IBOR
∆ICOMP
∆IVREF
Standard Operating Conditions (unless otherwise stated)
Operating temperature –40°C ≤ TA ≤ +85°C for industrial and
0°C ≤ TA ≤ +70°C for commercial and
–40°C ≤ TA ≤ +125°C for extended
Characteristic
Min Typ† Max Units
Conditions
Supply Voltage
RAM Data Retention
Voltage (Note 1)
VDD start voltage to
ensure Power-on Reset
VDD rise rate to ensure
Power-on Reset
Brown-out Detect Voltage
Supply Current (Note 2)
3.0 -
4.5 -
–
1.5*
–
Vss
0.05* –
3.7 4.0
3.7 4.0
–
1.8
–
35
–
9.0
Power Down Current (Note 3)
–
1.0
WDT Current (Note 5)
–
6.0
Brown-out Reset Current (Note 5) –
350
Comparator Current for each Com-
parator (Note 5)
–
VREF Current (Note 5)
–
6.0 V
5.5 V
–V
XT, RC and LP osc configuration
HS osc configuration
Device in SLEEP mode
–V
See section on power-on reset for details
– V/ms See section on power-on reset for details
4.3 V
4.4
3.3 mA
70 µA
20 mA
2.5 µA
15 µA
20 µA
25 µA
425 µA
100 µA
300 µA
BOREN configuration bit is cleared
(Extended)
XT and RC osc configuration
FOSC = 4 MHz, VDD = 5.5V, WDT dis-
abled (Note 4)
LP osc configuration, PIC16C62X-04
only
FOSC = 32 kHz, VDD = 4.0V, WDT dis-
abled
HS osc configuration
FOSC = 20 MHz, VDD = 5.5V, WDT dis-
abled
VDD=4.0V, WDT disabled
(125°C)
VDD=4.0V
(125°C)
BOR enabled, VDD = 5.0V
VDD = 4.0V
VDD = 4.0V
*
†
Note 1:
2:
3:
4:
5:
These parameters are characterized but not tested.
Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the
formula Ir = VDD/2Rext (mA) with Rext in kΩ.
The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
© 1998 Microchip Technology Inc.
Preliminary
DS30235G-page 81
Share Link: 