PIC16C62XAT-20I/SO View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16C62XAT-20I/SO

EPROM-Based 8-Bit CMOS Microcontroller

Microchip Technology 

PIC16C62X

12.2 DC CHARACTERISTICS:

PIC16LC62X-04 (Commercial, Industrial)

Param

No.

Sym

Standard Operating Conditions (unless otherwise stated)

Operating temperature –40˚C ≤ TA ≤ +85˚C for industrial and

0˚C ≤ TA ≤ +70˚C for commercial and

–40˚C ≤ TA ≤ +125˚C for extended

Operating voltage VDD range as described in DC spec Table 12-1 and Table 12-2

Characteristic

Min Typ† Max Units

Conditions

D001

D002

D003

D004

D005

D010

D010A

D020

D023

*

†

Note 1:

2:

3:

4:

5:

VDD

Supply Voltage

3.0

- 6.0 V XT and RC osc configuration

2.5

6.0

LP osc configuration

VDR

RAM Data Retention

Voltage (Note 1)

–

1.5* –

V Device in SLEEP mode

VPOR

VDD start voltage to

ensure Power-on Reset

–

VSS –

V See section on Power-on Reset for

details

SVDD

VDD rise rate to ensure

Power-on Reset

0.05* –

– V/ms See section on Power-on Reset for

details

VBOR

Brown-out Detect Voltage

3.7 4.0 4.3 V BOREN configuration bit is cleared

IDD

Supply Current (Note 2)

–

1.4 2.5 mA XT and RC osc configuration

FOSC = 2.0 MHz, VDD = 3.0V, WDT dis-

abled (Note 4)

–

26 53 µA LP osc configuration

FOSC = 32 kHz, VDD = 3.0V, WDT dis-

abled

IPD

Power Down Current (Note 3)

–

0.7 2 µA VDD=3.0V, WDT disabled

∆IWDT

∆IBOR

∆ICOMP

∆IVREF

WDT Current (Note 5)

Brown-out Reset Current

(Note 5)

Comparator Current for each

Comparator (Note 5)

VREF Current (Note 5)

–

6.0 15 µA VDD=3.0V

–

350 425 µA BOR enabled, VDD = 5.0V

–

100 µA VDD = 3.0V

–

300 µA VDD = 3.0V

These parameters are characterized but not tested.

Data in "Typ" column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are not

tested.

This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the

part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD to VSS.

For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the

formula Ir = VDD/2Rext (mA) with Rext in kΩ.

The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the

base IDD or IPD measurement.

DS30235G-page 82

Preliminary

© 1998 Microchip Technology Inc.

Share Link: