DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST10F276 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ST10F276 Datasheet PDF : 229 Pages
First Prev 51 52 53 54 55 56 57 58 59 60 Next Last
ST10F276
Figure 7. Hardware provisions to activate the BSL
Bootstrap loader
External
signal
5.2.5
P0L.4
RP0L.4
8kmax.
Circuit 1
P0L.4
Normal boot
BSL
RP0L.4
8kmax.
Circuit 2
Memory configuration in bootstrap loader mode
The configuration (that is, the accessibility) of the ST10F276’s memory areas after reset in
Bootstrap Loader mode differs from the standard case. Pin EA is evaluated when BSL mode
is selected to enable or to not enable the external bus:
If EA = 1, the external bus is disabled (BUSACT0 = 0 in BUSCON0 register);
If EA = 0, the external bus is enabled (BUSACT0 = 1 in BUSCON0 register).
Moreover, while in BSL mode, accesses to the internal IFLASH area are partially redirected:
All code accesses are made from the special Test-Flash seen in the range 00’0000h to
00’01FFFh;
User IFLASH is only available for read and write accesses (Test-Flash cannot be read
or written);
Write accesses must be made with addresses starting in segment 1 from 01'0000h,
regardless of the value of ROMS1 bit in SYSCON register;
Read accesses are made in segment 0 or in segment 1 depending on the ROMS1
value;
In BSL mode, by default, ROMS1 = 0, so the first 32 Kbytes of IFlash are mapped in
segment 0.
Example:
In default configuration, to program address 0, the user must put the value 01'0000h in
the FARL and FARH registers but to verify the content of the address 0 a read to
00'0000h must be performed.
51/229

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]