PIC16C54BT-20I/SP View Datasheet(PDF) - Microchip Technology

Part Name

Description

Manufacturer

PIC16C54BT-20I/SP

EPROM/ROM-Based 8-Bit CMOS Microcontroller Series

Microchip Technology 

PIC16C54B/C54C/CR54B/CR54C/C55A/C56A/CR56A/C57C/CR57C/C58B/CR58B

19.1 DC Characteristics: PIC16C54B/C54C/C55A/C56A/C57C/C58B-04, 20 (Commercial)

PIC16CR54B/CR54C/CR56A/CR57C/CR58B-04, 20 (Commercial)

PIC16C54B/C54C/C55A/C56A/C57C/C58B-04I, 20I (Industrial)

PIC16CR54B/CR/54C/CR56A/CR57C/CR58B-04I, 20I (Industrial)

DC Characteristics

Power Supply Pins

Standard Operating Conditions (unless otherwise specified)

Operating Temperature 0°C ≤ TA ≤ +70°C (commercial)

–40°C ≤ TA ≤ +85°C (industrial)

Characteristic

Sym Min Typ(1) Max Units

Conditions

Supply Voltage

VDD

XT, RC and LP options

HS option

RAM Data Retention Voltage(2) VDR

3.0 — 5.5 V

4.5 — 5.5 V

— 1.5* — V Device in SLEEP mode

VDD start voltage to ensure

Power-On Reset

VPOR — VSS — V See Section 7.4 for details on

Power-on Reset

VDD rise rate to ensure

Power-On Reset

Supply Current(3)

XT and RC(4) options

HS option

LP option, Commercial

LP option, Industrial

Power Down Current(5)

Commercial

Industrial

SVDD

IDD

IPD

0.05* —

— 1.8

— 4.5

— 14

— 17

— 4.0

— 0.25

— 4.0

— 0.25

— V/ms See Section 7.4 for details on

Power-on Reset

2.4 mA FOSC = 4.0 MHz, VDD = 5.5V

16 mA FOSC = 20 MHz, VDD = 5.5V

32 µA FOSC = 32 kHz, VDD = 3.0V, WDT disabled

40 µA FOSC = 32 kHz, VDD = 3.0V, WDT disabled

12 µA VDD = 3.0V, WDT enabled

4.0 µA VDD = 3.0V, WDT disabled

14 µA VDD = 3.0V, WDT enabled

5.0 µA VDD = 3.0V, WDT disabled

* These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance

only and is not tested.

2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on

the current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to

Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.

b) For standby current measurements, the conditions are the same, except that

the device is in SLEEP mode.

4: Does not include current through Rext. The current through the resistor can be estimated by the

formula: IR = VDD/2Rext (mA) with Rext in kΩ.

5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

© 1998 Microchip Technology Inc.

Preliminary

DS30453B-page 173

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