DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST1G3234B View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ST1G3234B Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ST1G3234B
Electrical characteristics
Table 8.
Capacitance characteristics
Test condition
Value
Symbol
Parameter
CINB
CO
Input capacitance
Output capacitance
CPD
Power dissipation
capacitance
VCCB VCCA
(V) (V)
open open
2.5 3.3
2.5 3.3
1.8 3.3
1.4 2.5
1.4 1.8
3.3 1.8
f = 10 MHz
TA = 25 °C
-40 to 85 °C Unit
Min Typ Max Min Max
5
pF
6
pF
27
27
23
pF
20
27
Note: 1 CPD is defined as the value of the device’s internal equivalent capacitance which is
calculated from the operating current consumption without load. (Refer to Test Circuit).
Average current can be obtained by the following equation: ICC(opr) = CPD x VCC x fIN + ICC/4
(per circuit)
9/17

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]