STP45NF3LLFP(2002) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP45NF3LLFP
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STP45NF3LLFP Datasheet PDF : 11 Pages
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STP45NF3LL - STB45NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 22.5A
RG = 4.7Ω VGS = 4.5V
(Resistive Load, see Fig. 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 24V, ID = 45A,
VGS = 5V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 15V, ID = 22.5A,
RG = 4.7Ω, VGS = 4.5V
(Resistive Load, see Fig. 3)
Min.
Typ.
17
100
12.5
4.6
5.2
Max.
17
Unit
ns
ns
nC
nC
nC
Min.
Typ.
20
21
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 45A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 45A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
35
44
2.5
Max.
45
180
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area for TO-220/D2PAK
Thermal Impedance for TO-220/D2PAK
3/11
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