STP45NF3LLFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP45NF3LLFP

N-channel 30V - 0.014Ω - 45A TO-220 - TO-220FP - D2PAK STripFET II™ power MOSFET

STMicroelectronics 

STP45NF3LL - STB45NF3LL

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 45A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 45A, VDD = 15V

di/dt = 100A/µs,

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min Typ. Max Unit

45 A

180 A

1.3 V

35

ns

44

nC

2.5

A

5/16

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