DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F050G4T6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F050G4T6 Datasheet PDF : 97 Pages
First Prev 31 32 33 34 35 36 37 38 39 40 Next Last
Electrical characteristics
STM32F050xx
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer to Table 12: Voltage characteristics for the maximum allowed input voltage values.
5. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 12: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note (2) below Table 51: ADC accuracy.
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).
Table 14. Thermal characteristics
Symbol
Ratings
TSTG
TJ
Storage temperature range
Maximum junction temperature
Value
Unit
–65 to +150
°C
150
°C
38/97
Doc ID 023683 Rev 1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]