DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STM32F050F4P7 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM32F050F4P7 Datasheet PDF : 97 Pages
First Prev 41 42 43 44 45 46 47 48 49 50 Next Last
Electrical characteristics
STM32F050xx
Table 24. Typical and maximum current consumption from VBAT supply
Typ @ VBAT
Max(1)
Symbol Parameter
Conditions
TA = TA = TA = Unit
25 °C 85 °C 105 °C
IDD_VBAT
Backup
domain
supply
current
LSE & RTC ON; “Xtal
mode”: lower driving
capability;
0.41 0.43 0.53 0.58 0.71 0.80
0.85
LSEDRV[1:0] = '00'
LSE & RTC ON; “Xtal
mode” higher driving
capability;
0.71 0.75 0.85 0.91 1.06 1.16
1.25
LSEDRV[1:0] = '11'
1. Data based on characterization results, not tested in production.
1.1
1.55
1.5
µA
2
Typical current consumption
The MCU is placed under the following conditions:
VDD=VDDA=3.3 V
All I/O pins are in analog input configuration
The Flash access time is adjusted to fHCLK frequency (0 wait states from 0 to 24 MHz,
1 wait state above)
Prefetch is ON when the peripherals are enabled, otherwise it is OFF
When the peripherals are enabled, fPCLK = fHCLK
PLL is used for frequencies greater than 8 MHz
AHB prescaler of 2, 4, 8 and 16 is used for the frequencies 4 MHz, 2 MHz, 1 MHz and
500 kHz respectively
A development tool is connected to the board and the parasitic pull-up current is around
30 µA
46/97
Doc ID 023683 Rev 1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]