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STM32F050G4T6 View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F050G4T6 Datasheet PDF : 97 Pages
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Electrical characteristics
STM32F050xx
Table 45. I/O static characteristics (continued)
Symbol Parameter
Conditions
Min
Typ
Max
Weak pull-down
RPD equivalent
resistor(3)
CIO
I/O pin
capacitance
VIN = VDD
25
40
55
-
5
-
1. Data based on design simulation only. Not tested in production.
2. Leakage could be higher than maximum value, if negative current is injected on adjacent pins.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
Unit
kΩ
pF
66/97
Doc ID 023683 Rev 1

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