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STM32F030R4T6(2013) View Datasheet(PDF) - STMicroelectronics

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Description
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STM32F030R4T6 Datasheet PDF : 88 Pages
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Electrical characteristics
STM32F030x4 STM32F030x6 STM32F030x8
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 15. Typical application with a 32.768 kHz crystal
Resonator with
integrated capacitors
CL1
OSC32_IN
32.768 kH z
resonator
Drive
programmable
amplifier
fLSE
OSC32_OU T
CL2
Note:
6.3.8
MS30253V1
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
Internal clock source characteristics
The parameters given in Table 33 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI) RC oscillator
Symbol
Table 33. HSI oscillator characteristics(1)
Parameter
Conditions
Min Typ
fHSI
TRIM
DuCy(HSI)
ACCHSI
tsu(HSI)
IDDA(HSI)
Frequency
HSI user trimming step
Duty cycle
Accuracy of the HSI
oscillator (factory
calibrated)(3)
TA = –40 to 85 °C
TA = 25 °C
HSI oscillator startup
time
HSI oscillator power
consumption
-
8
-
-
45(2)
-
-
±5
-
±1
1(2)
-
-
80
1. VDDA = 3.3 V, TA = –40 to 85 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. With user calibration.
Max
1(2)
55(2)
-
-
2(2)
-
Unit
MHz
%
%
%
%
µs
µA
52/88
DocID024849 Rev 1

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