STM32F030R8P6(2013) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM32F030R8P6
(Rev.:2013)

Value-line ARM®-based 32-bit MCU with up to 256-KB Flash, timers, ADC, communication interfaces, 2.4-3.6 V operation

STMicroelectronics 

Electrical characteristics

STM32F030x4 STM32F030x6 STM32F030x8

Table 44. I/O static characteristics (continued)

Symbol Parameter

Conditions

Min

Typ

Max

Unit

TC and TTa I/O

VIH

High level input FT and FTf I/O

voltage

BOOT0

0.445 VDD+0.398(1) -

0.5 VDD+0.2(1)

-

0.2 VDD+0.95(1)

-

-

-

V

-

All I/Os except BOOT0 pin

0.7 VDD

-

-

TC and TTa I/O

-

200(1)

-

Vhys

Schmitt trigger

hysteresis

FT and FTf I/O

BOOT0

-

100(1)

-

mV

-

300(1)

-

Ilkg

Input leakage

current (2)

Weak pull-up

RPU equivalent

resistor (4)

TC, FT and FTf I/O

TTa in digital mode

VSS  VIN  VDD

TTa in digital mode

VDD  VIN  VDDA

TTa in analog mode

VSS  VIN  VDDA

FT and FTf I/O (3)

VDD  VIN  5 V

VIN VSS

-

-

 0.1

-

-

1

µA

-

-

 0.2

-

-

10

25

40

55

k

Weak pull-down

RPD equivalent

resistor (4)

VIN VDD

25

40

55

k

CIO

I/O pin

capacitance

-

5

-

pF

1. Data based on design simulation only. Not tested in production.

2. Leakage could be higher than maximum value, if negative current is injected on adjacent pins. Refer to

Table 43: I/O current injection susceptibility.

3. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.

4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS.

This MOS/NMOS contribution to the series resistance is minimum (~10% order).

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 16 for standard I/Os, and in Figure 17 for

5 V tolerant I/Os.

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DocID024849 Rev 1

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