STP12NB30FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP12NB30FP Datasheet PDF : 6 Pages
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STP12NB30/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Test Conditions
VDD = 150 V ID = 6 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD =240 V ID =12A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 240 V ID =12 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 12 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 12 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
20
10
Max.
28
14
Unit
ns
ns
29
40
nC
11
nC
12
nC
Min.
Typ .
10
10
20
Max.
14
14
28
Unit
ns
ns
ns
Min.
Typ .
Max.
12
48
Unit
A
A
1.5
V
250
ns
2
µC
16
A
3/6
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