STP3NB90FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3NB90FP Datasheet PDF : 10 Pages
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STP3NB90 - STP3NB90FP
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
900
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.7 A
4
4.2
Ω
DYNAMIC
Symbol
gfs(1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ; ID = 1.7 A
Min.
VDS = 25 V, f = 1 MHz, VGS = 0
Typ.
3
690
82
8.5
Max. Unit
S
pF
pF
pF
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 450 V, ID = 1.75 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see , Figure 3)
VDD = 720 V, ID = 3.5 A,
VGS = 10 V
Min.
Typ.
17
12
22
7.3
9.2
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 450 V, ID = 1.75 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see , Figure 3)
VDD = 720 V, ID = 3.5 A,
RG = 4.7Ω, VGS = 10 V
(Inductive Load see , Figure 5)
Min.
Typ.
26
39
16
20
25
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3.5 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3.5 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
630
3.5
11
Max.
3.5
14
1.6
Unit
A
A
V
ns
µC
A
3/10
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