STP60NF10(2004) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP60NF10
(Rev.:2004)

N-CHANNEL 100V - 0.019
- 80A TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STP60NF10

ELECTRICAL CHARACTERISTICS (continued)

UhiyrÃ')ÃSWITCHING ON

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

td(on)

tr

Turn-on Delay Time

Rise Time

W VDD = 50 V

RG = 4.7

ID = 40 A

VGS = 10 V

17

56

ns

ns

(Resistive Load, Figure )

Qg

Total Gate Charge

VDD= 50V ID= 80A VGS= 10V

104

nC

Qgs

Gate-Source Charge

20

nC

Qgd

Gate-Drain Charge

32

nC

UhiyrÃ()ÃSWITCHING OFF

Symbol

Parameter

td(off)

tf

Turn-off Delay Time

Fall Time

Test Conditions

W, VDD = 50 V

RG = 4.7

ID = 40 A

VGS = 10 V

(Resistive Load, Figure 3)

Min.

Typ.

82

23

Max.

Unit

ns

ns

Uhiyrà )ÃSOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

ISD

œ ISDM ( )

Source-drain Current

Source-drain Current (pulsed)

VSD (*) Forward On Voltage

ISD = 80 A

VGS = 0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

œ)(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

( Pulse width limited by safe operating area.

ISD = 80 A

di/dt = 100A/µs

VDD = 50 V

Tj = 150°C

(see test circuit, Figure 5)

Min.

Typ.

92

340

7.4

Max.

80

320

1.3

Unit

A

A

V

ns

mC

A

Avtˆ…rÃ")ÃSafe Operating Area

Avtˆ…rÃ#)ÃThermal Impedance

3/9

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