STP75NF20 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP75NF20
STMicroelectronics
STP75NF20 Datasheet PDF : 16 Pages
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STB75NF20 - STP75NF20 - STW75NF20
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 75A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A,VDD = 100V
di/dt = 100 A/µs
Tj = 25°C (see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A, VDD = 100V
di/dt = 100 A/µs
Tj = 150°C (see Figure 20)
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
75 A
300 A
1.6 V
222
ns
2.18
µC
19
A
267
ns
3
µC
22
A
5/16
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