STP75NF68 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP75NF68 Datasheet PDF : 12 Pages
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Electrical characteristics
2
Electrical characteristics
STP75NF68
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
68
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
2
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
V
1 µA
10 µA
±100 nA
3
4
V
0.010 0.014 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15 V, ID = 40 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 34 V, ID = 80 A
VGS =10 V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
60
S
2550
pF
550
pF
175
pF
75
nC
17
nC
30
nC
4/12
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