STP40NF03L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP40NF03L

N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET™ Power MOSFET

STMicroelectronics 

STF40NF03L, STP40NF03L

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 40 A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 40 A,

di/dt = 100 A/µs,

VDD = 15 V, Tj = 150 °C

(see Figure 18)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

40

A

-

160 A

-

1.5 V

34.5

ns

-

30

nC

2

A

Doc ID 6794 Rev 8

5/14

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