STP55NE06LFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP55NE06LFP

N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET

STMicroelectronics 

STP55NE06L

STP55NE06LFP

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE™ ” POWER MOSFET

TYPE

STP55NE06L

STP 55N E06LF P

VDSS

60 V

60 V

RDS(on)

< 0.022 Ω

< 0.022 Ω

s TYPICAL RDS(on) = 0.018 Ω

s EXCEPTIONAL dV/dt CAPABILTY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE 100 oC

s HIGH dV/dt CAPABILITY

s APPLICATION ORIENTED

CHARACTERIZATION

ID

55 A

28 A

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size”

process whereby a single body is implanted on a

strip layout structure. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

S ym b o l

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Volt age (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM ( •)

Ptot

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 o C

Derating Factor

VISO Insulation W it hstand Voltage (DC)

dV/dt Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. O perating Junction Temperature

(•) Pulse width limited by safe operating area

December 1997

3

2

1

TO-220

3

2

1

TO220FP

INTERNAL SCHEMATIC DIAGRAM

V alu e

Unit

STP55NE06L ST P55NE06LFP

60

V

60

V

± 15

V

55

28

A

39

20

A

220

220

A

130

0. 86

35

0.23

W

W/oC



2000

V

7

-65 to 175

175

(1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ns

oC

oC

1/6

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