STP4N62K3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP4N62K3

N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

AM07181v1

ID = 50 µA

RDS(on)

(norm)

2.5

2.0

VGS = 10 V

ID = 1.9 A

AM07182v1

1.5

0.90

1.0

0.80

0.5

0.70

-75

-25

25

75

125

TJ(°C)

-75 -25

25

75

125 TJ(°C)

Figure 16. Maximum avalanche energy vs

starting Tj

Figure 17. Normalized BVDSS vs temperature

EAS

(mJ)

120

110

100

90

80

70

60

50

40

30

20

10

0

0

ID=3.8 A

VDD=50 V

AM07184v1

20 40 60 80 100 120 140 TJ(°C)

BVDSS

(norm)

1.10

1.05

ID = 1 mA

AM07183v1

1.00

0.95

0.90

-75 -25

25

75

125 TJ(°C)

Figure 18. Source-drain diode forward

characteristics

VSD(V)

1.0

0.9

TJ=150°C

AM08888v1

TJ=25°C

0.8

0.7

TJ=-50°C

0.6

0.5

0.4

0.3

0.2

0.1

01

2

3

4

5 ISD(A)

8/19

Doc ID 17548 Rev 4

Share Link: