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STPIC6C595MTR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPIC6C595MTR
ST-Microelectronics
STMicroelectronics 
STPIC6C595MTR Datasheet PDF : 14 Pages
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STPIC6C595
DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min.
V(BR)DSX Drain-to-Source breakdown ID = 1mA
33
Voltage
VSD Source-to-Drain Diode
Forward Voltage
IF = 100 mA
VOH High Level Output Voltage IOH = -20 µA
VCC = 4.5V
4.4
SER OUT
IOH = -4 mA
VCC = 4.5V
4
VOL Low Level Output Voltage IOH = 20 µA
SER OUT
IOH = 4 mA
VCC = 4.5V
VCC = 4.5V
IIH
High Level Input Current VCC = 5.5V
VI = VCC
IIL
Low Level Input Current
VCC = 5.5V
VI = 0
ICC Logic Supply Current
VCC = 5.5V All outputs OFF or ON
ICC(FRQ) Logic Supply Current at
Frequency
fSRCK = 5MHz
CL = 30pF
All outputs OFF
(See Figg. 6, 18 and 19)
IN
Nominal Current
VDS(on) = 0.5V
IN = ID
TC=85°C (See Note 5, 6, 7)
IDSX Off-State Drain Current
VDS = 30V
VCC = 5.5V
VDS = 30V
TC=125°C
VCC =5.5V or 0V
RDS(on)
Static Drain Source ON
ID = 50mA
State Resistance (See Note
5, 6 and figg. 14, 16)
ID = 50mA
TC=125°C
VCC = 4.5V
VCC = 4.5V
ID = 100mA
VCC = 4.5V
Typ.
37
0.85
4.49
4.2
0.005
0.3
20
0.2
90
0.3
0.6
4.5
6.5
4.5
Max.
1.2
0.1
0.5
1
-1
200
2
5
8
6
9
6
Unit
V
V
V
V
V
V
µA
µA
µA
mA
mA
µA
µA
SWITCHING CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tPHL Propagation Dealy Time, CL = 30pF ID = 75mA
High to Low Level Output (See Figg. 4, 5, 6,7, 20)
from G
80
ns
tPLH Propagation Dealy Time,
Low to High Level Output
from G
130
ns
tr
Rise Time, Drain Output
60
ns
tf
Fall Time, Drain Output
50
ns
tpd propagation Delay Time
20
ns
ta
Reverse Recovery Current IF = 100mA
di/dt = 10A/µs
Rise Time
(See Note 5, 6 and Fig. 9 and 10)
39
ns
trr
Reverse Recovery Time
115
ns
Note 1: All Voltage value are with respect to GND
Note 2: Each power DMOS source is internally connected to GND
Note 3: Pulse duration 100µs and duty cycle 2%
Note 4: Drain Supply Voltage = 15V, starting junction temperature (TJS) = 25°C. L = 1.5H and IAS = 200mA (See Fig. 11 and 12)
Note 5: Technique should limit TJ - TC to 10°C maximum
Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.
Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5V at TC = 85°C.
4/14

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