STPS15L45CB View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS15L45CB Datasheet PDF : 4 Pages
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STPS15L45CB
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Parameter
Per diode
Total
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
4
2.4
0.7
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF * Forward voltage drop
Tj = 25°C
IF = 7.5 A
Tj = 125°C
IF = 7.5 A
Tj = 25°C
IF = 12 A
Tj = 125°C
IF = 12 A
Tj = 25°C
IF = 15 A
Tj = 125°C
IF = 15 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.29 x IF(AV) + 0.023 IF2(RMS)
Min. Typ. Max. Unit
1
mA
23 45 mA
0.52
V
0.40 0.46
0.60
0.49 0.57
0.64
0.53 0.63
Fig. 1: Conduction losses versus average current.
PF(av)(W)
5.5
5.0
4.5
δ = 0.1
4.0
δ = 0.05
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
δ = 0.2
IF(av)(A)
4
5
6
δ = 0.5
δ=1
T
δ=tp/T
tp
7
8
9
10
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
IF(av)(A)
9
8
Rth(j-a)=Rth(j-c)
7
6
5
4
3
2
T
Rth(j-a)=70°C/W
1
δ=tp/T
tp
0
Tamb(°C)
0
25
50
75
100
125
150
2/4
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