STPS16150CT(2001) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS16150CT Datasheet PDF : 5 Pages
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STPS16150CT/CG
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
TO-220AB / D2PAK
TO-220AB / D2PAK
TO-220AB / D2PAK
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
3
1.8
0.6
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF ** Forward voltage drop
Tj = 25°C
IF = 8 A
Tj = 125°C
Tj = 25°C
IF = 8 A
IF = 16 A
Tj = 125°C IF = 16 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.014 IF2(RMS)
Min. Typ. Max. Unit
3.0
µA
4.0 mA
0.92 V
0.70 0.75
1
0.8 0.86
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
8
7
6
5
4
3
2
1
0
012
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(av) (A)
δ=tp/T
tp
3 4 5 6 7 8 9 10
IF(av)(A)
9
8
7
6
5
4
3
T
2
1
0 δ=tp/T
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
2/5
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