STPS16150CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS16150CT Datasheet PDF : 9 Pages
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STPS16150C
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5, square wave
Tc = 150 °C
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
150
V
20
A
8
A
16
150
A
338
W
-65 to +175 °C
175
°C
Symbol
Rth(j-c)
Rth(c)
Table 2. Thermal resistance parameters
Junction to case
Coupling
Parameter
Per diode
Total
Max. value
3
1.8
0.6
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp =380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 8 A
Tj = 25 °C
Tj = 125 °C
IF = 16 A
Min. Typ. Max. Unit
-
3.0
µA
-
4.0
mA
-
0.92
-
0.70 0.75
V
-
1
-
0.80 0.86
To evaluate the conduction losses, use the following equation:
P = 0.64 x IF(AV) + 0.014 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS2251 - Rev 3
page 2/9
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