STPS16150CR View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS16150CR Datasheet PDF : 5 Pages
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Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
STPS16150CT/CG/CR
Fig. 46 Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
VR(V)
1E-1
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
50
75
100 125 150
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
C(pF)
1000
F=1MHz
Tj=25°C
100
10
12
VR(V)
5 10 20
50 100 200
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=125°C
Typical values
10.0
Tj=125°C
Tj=25°C
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board, copper thckness: 35µm) (STPS16150CG only).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0246
S(cm²)
8 10 12 14 16 18 20
3/5
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