STPS16L40 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS16L40 Datasheet PDF : 4 Pages
| |||
STPS16L40CT
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(c)
Parameter
Per diode
Total
Coupling
Value
2.2
1.3
0.3
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 100°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 8 A
Tj = 125°C
IF = 8 A
Tj = 25°C
IF = 16 A
Tj = 125°C
IF = 16 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26 x IF(AV) + 0.024 IF2(RMS)
Min. Typ. Max. Unit
0.7 mA
15 35 mA
0.5
V
0.39 0.45
0.63
0.55 0.64
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).
PF(av)(W)
6.0
5.5
5.0
δ = 0.05
4.5
4.0
δ = 0.1
δ = 0.2
δ = 0.5
IF(av)(A)
9
8
7
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
3.5
δ=1
5
3.0
4
2.5
2.0
1.5
3
T
T
2
1.0
1
Tamb(°C)
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0 1 2 3 4 5 6 7 8 9 10
δ=tp/T
tp
0
0
25
50
75
100 125 150
2/4
Share Link: 