STPS20100AFSY1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS20100AFSY1

Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier

STMicroelectronics 

STPS20100HR

Characteristics

Table 4.

Symbol

s

Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C

Characteristic

MIL-STD-750

test method

Test conditions

Values

Min. Max.

Units

IR

VF1(1)

VF2(1)

C

Reverse Current

Forward Voltage

Capacitance

Zth(j-c)

Relative thermal impedance,

junction to case

1. Pulse width ≤ 680µs, Duty Cycle ≤ 2%

4016

4011

4001

3101

DC method, VR = 100 V

Pulse method, IF = 10 A

Pulse method, IF = 20 A

VR = 10 V, F = 1 MHz

IH = 15 to 40 A, tH = 50 ms

IM = 50 mA, tmd = 100 µs

-

30

µA

-

780 mV

-

1

V

-

700 pF

Calculate ΔVF °C/W

Table 5. Electrical measurements at high and low temperatures (per diode)

Symbol

Characteristic

MIL-STD-750

test method

Test conditions

Values

Min. Max.

IR Reverse Current

VF2(1) Forward Voltage

1. Pulse width ≤ 680µs, Duty Cycle ≤ 2%

4016

4011

Tcase = +125 (+0, -5) °C

DC method, VR = 100 V

Tcase = +125 (+0, -5) °C

pulse method, IF = 20 A

Tcase = -55 (+5, -0) °C

pulse method, IF = 20 A

-

20

-

900

-

1.1

Units

mA

mV

V

Doc ID 16953 Rev 1

3/10

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