STPS2045C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2045C-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS2045C-Y
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
IF(RMS) Forward rms current
30
IF(AV) Average forward current δ = 0.5
Tc = 155 °C Per diode
10
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
180
PARM Repetitive peak avalanche power
tp = 1 μs, Tj = 25 °C
4000
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
-65 to +175
-40 to +175
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances parameters
V
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
Per diode
Total
2.2
°C/W
1.3
0.3
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
-
-
Tj = 125 °C IF = 10 A
-
VF(1) Forward voltage drop
Tj = 25 °C
IF = 20 A
-
Tj = 125 °C
-
1. Pulse test : tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
-
100 μA
7
15 mA
0.5 0.57
- 0.84 V
0.65 0.72
2/7
Doc ID 17262 Rev 1
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