STPS2045CGY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2045CGY Datasheet PDF : 7 Pages
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STPS2045C-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
8
7
6
5
4
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IF(AV)(A)
12
10
8
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
3
4
T
2
T
2
1
IF(AV)(A)
δ=tp/T
tp
δ=tp/T
tp
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12
0
25
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
IM(A)
140
Zth(j-c)/Rth(j-c)
1.0
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
0.8
TC=75°C
TC=100°C
TC=125°C
1E+0
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 17262 Rev 1
3/7
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