STPS2045CH View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS2045CH

Power Schottky rectifier

STMicroelectronics 

STPS2045CH

Characteristics

Figure 2.

Average forward power dissipation Figure 3.

versus average forward current

(per diode)

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

PF(AV)(W)

9

8

7

6

5

4

3

2

1

0

0

2

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

δ=1

C(pF)

1000

500

200

T

IF(AV)(A)

δ = tp/T tp

100

4

6

8

10

12

14

1

2

F=1MHz

VOSC=30mVRMS

Tj=25°C

VR(V)

5

10

20

50

Figure 4. Normalized avalanche power

derating versus pulse duration

PARM (t p )

PARM (10 µs)

1

0.1

0.01

0.001

1

tp (µs)

10

100

1000

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04

1.E-03

1.E-02

1.E-01

tP(s)

1.E+00

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

IR(µA)

1.E+05

1.E+04

1.E+03

1.E+02

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

1.E+01

Tj=25°C

1.E+00

1.E-01

0

VR(V)

5

10

15

20

25

30

35

40

45

Figure 7. Forward voltage drop versus

forward current (per diode)

IFM(A)

1000

100

10

Tj=125°C

(typical values)

Tj=125°C

(maximum values)

Tj=25°C

(maximum values)

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Doc ID 023045 Rev 1

3/7

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