STPS2545CGY-TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS2545CGY-TR Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS2545C-Y
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current δ = 0.5
Tc =160 °C Per diode
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs square F=1 kHz
IRSM Non repetitive peak reverse current
tp = 100 µs square
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j---–----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
45
30
12.5
200
1
2
4800
-65 to +175
-40 to +175
10000
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
1.6
°C/W
1.1
°C/W
0.6
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
Tj = 25 °C
VR = VRRM
-
Tj = 125 °C
-
- 125 µA
9
25
mA
VF (1) Forward voltage drop
Tj = 125 °C IF = 12.5 A
-
0.50 0.57
Tj = 25 °C IF = 25 A
-
- 0.84
V
Tj = 125 °C IF = 25 A
- 0.65 0.72
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.012 x IF2(RMS)
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Doc ID 17260 Rev 2
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