STPS20120CFP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS20120CFP

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS20120C

Figure 7.

Relative variation of thermal

Figure 8.

impedance junction to case versus

pulse duration (TO-220AB & I2PAK)

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03

1.E-02

T

tp(s)

δ=tp/T

1.E-01

tp

1.E+00

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2 Single pulse

0.1

0.0

1.E-03

1.E-02

tp(s)

1.E-01

T

δ=tp/T

1.E+00

tp

1.E+01

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

IR(mA)

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

1.E-05

0

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100 110 120

Figure 10. Junction capacitance versus

reverse voltage applied (typical

values, per diode)

C(pF)

1000

F=1MHz

VOSC=30mVRMS

Tj=25°C

100

VR(V)

10

1

10

100

Figure 11. Forward voltage drop versus

forward current (per diode)

IFM(A)

100

Tj=125°C

(maximum values)

Tj=125°C

(typical values)

10

Tj=25°C

(maximum values)

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

4/9

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