STPS30100ST View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30100ST Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS30100ST
Table 2.
Symbol
Thermal resistance
Parameter
Rth(j-c) Junction to case
Table 3.
Symbol
Static electrical characteristics (per diode)
Parameter
Test Conditions
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
VR = 70 V
Tj = 25° C
Tj = 125° C
IF = 5 A
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
IF = 10 A
IF = 15 A
Tj = 25° C
Tj = 125° C
IF = 30 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.475 x IF(AV) + 0.006 x IF2(RMS)
Value
1
Unit
°C/W
Min. Typ. Max. Unit
175 µA
20 50 mA
60 µA
10 20 mA
0.475
0.385
0.555
0.475
V
0.620 0.660
0.525 0.565
0.740 0.800
0.605 0.655
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