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STPS3L25S(2003) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STPS3L25S
(Rev.:2003)
ST-Microelectronics
STMicroelectronics 
STPS3L25S Datasheet PDF : 5 Pages
1 2 3 4 5
®
STPS3L25S
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
3A
25 V
150°C
0.44 V
FEATURES AND BENEFITS
n VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
n OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
n HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
n AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters.
Packaged in SMC, this device is especially in-
tended for use as an antiparallel diode on synchro-
nous rectification freewheel MOSFET’s at the
secondary of 3.3V SMPS and DC/DC units.
SMC
JEDEC DO-214AB
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
Tstg
PARM
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
TL = 115°C δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current
tp= 2 µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Storage temperature range
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
25
10
3
75
1
1
- 65 to + 150
1500
150
10000
Unit
V
A
A
A
A
A
°C
W
°C
V/µs
* : dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j a)
July 2003 - Ed: 4A
1/4

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