STPS3L60-C2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS3L60-C2

POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS3L60-C2

THERMAL RESISTANCES

Symbol

Rth(j-a)

Rth(j-l)

Junction to ambient

Junction to leads

Parameter

Lead length = 10 mm

Lead length = 10 mm

Value

80

20

Unit

°C/W

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

IR * Reverse leakage current

VF * Forward voltage drop

Tests conditions

Tj = 25°C

Tj = 100°C

VR = VRRM

Tj = 25°C

Tj = 100°C

IF = 3 A

IF = 3 A

Min.

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 0.44 x IF(AV) + 0.05 x IF2(RMS)

Typ.

Max.

150

15

0.62

0.61

Unit

µA

mA

V

Fig. 1: Average forward power dissipation versus

average forward current.

PF(av)(W)

2.5

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

2.0

δ=1

1.5

1.0

T

0.5

IF(av) (A)

δ=tp/T

tp

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Fig. 2: Average forward current versus ambient

temperature (δ = 0.5).

IF(av)(A)

3.5

3.0

Rth(j-a)=Rth(j-l)

2.5

2.0

1.5

Rth(j-a)=80°C/W

1.0

T

0.5

0.0 δ=tp/T

tp

0

25

Tamb(°C)

50

75

100

125

150

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

Tj(°C)

0

100

1000

0

25

50

75

100

125

150

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