STPS4030CT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS4030CT Datasheet PDF : 6 Pages
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STPS4030CT/CG/CR
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) Junction to case TO-220AB - D2PAK - I2PAK
Rth(c)
Per diode
Total
Coupling
Value
1.6
0.85
0.1
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests Conditions
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = VRRM
IF = 20 A
IF = 20 A
IF = 40 A
IF = 40 A
To evaluate the conduction losses use the following equation :
P = 0.25 x IF(AV) + 0.0075 IF2(RMS)
Min. Typ. Max. Unit
0.50 1.0 mA
170 350
0.44 0.49
V
0.35 0.40
0.52 0.61
0.46 0.55
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
P(W)
12
10
8
6
4
2
0
0
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(av)(A)
δ=tp/T
tp
5
10
15
20
25
IF(av)(A)
22
20
18
16
14
12
10
8
6
4
2
0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
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