STPS40L15 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40L15 Datasheet PDF : 5 Pages
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STPS40L15CW/CT
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
250
200
150
100
IM
50
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=110°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1.0E-4
1.0E-3
tp (s)
1.0E-2
T
δ=tp/T
1.0E-1
tp
1.0E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values per diode).
IR(mA)
5E+2
1E+2
Tj=100°C
1E+1
C(nF)
5.0
1.0
F=1MHz
Tj=25°C
1E+0
Tj=25°C
VR(V)
1E-1
0 2 4 6 8 10 12 14 16
0.1
1
VR(V)
2
5
10
20
Fig. 7: Forward voltage drop versus forward
current (typical values per diode).
Fig. 8: Forward voltage drop versus forward
current (typical maximum per diode).
IFM(A)
200.0
100.0
Tj=150°C
10.0
1.0
Tj=25°C
Tj=125°C
Tj=75°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IFM(A)
200
Tj=100°C
100
10
VFM(V)
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
3/5
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