STPS40L45C-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40L45C-Y Datasheet PDF : 7 Pages
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Characteristics
STPS40L45C-Y
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(mA)
1E+3
1E+2
1E+1
Tj = 150 °C
Tj = 125 °C
1E+0
Tj = 75 °C
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(nF)
10.0
F=1MHz
Tj=25°C
1.0
1E-1
1E-2
0
Tj = 25 °C
VR(V)
5
10 15
20
25 30 35 40
45
0.1
1
VR(V)
10
100
Figure 9.
Forward voltage drop versus
Figure 10. Thermal resistance junction to
forward current (maximum values,
ambient versus copper surface
per diode)
under tab.
IFM(A)
1000
100
Typical values
Tj=150°C
Tj=125°C
10
Tj=75°C
Tj=25°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Rth(j-a)(°C/W)
80
epoxy printed board FR4, copper thickness = 35 µm
70
60
50
40
30
20
10
0
0
S(Cu)(cm²)
5
10
15
20
25
30
35
40
4/7
Doc ID 023224 Rev 1
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