STPS41L45CR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STPS41L45CR

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS41L45CG / STPS41L45CT / STPS41L45CR

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

PARM(tp)

PARM(1µs)

1

0.1

0.01

0.001

0.01

0.1

tp(µs)

1

10

PARM(tp)

PARM(25°C)

1.2

1

0.8

0.6

0.4

0.2

0

100

1000

0

Tj(°C)

25

50

75

100

125

150

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

IM(A)

220

200

180

160

140

120

100

80

60

40 IM

20

0

1.E-03

t

δ=0.5

t(s)

1.E-02

1.E-01

Tc=25°C

Tc=75°C

Tc=125°C

1.E+00

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4 δ = 0.2

0.3 δ = 0.1

0.2

Single pulse

0.1

0.0

1.E-03

1.E-02

tp(s)

T

1.E-01

δ=tp/T

tp

1.E+00

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

0

5

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10

15

20

25

30

35

40

45

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values).

C(nF)

10.0

F=1MHz

Vosc =30mV

Tj=25°C

1.0

0.1

1

VR(V)

10

100

3/6

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