STPS5L60SY View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS5L60SY Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS5L60-Y
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
Tl = 100 °C δ = 0.5
IFSM
PARM
Surge non repetitive forward
current
Repetitive peak avalanche power
Half wave, single phase
tp = 10 ms
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj
Operating junction temperature(1)
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol
Parameter
Rth (j-l)
Junction to leads
Value
60
15
5
150
4000
-65 to +175
-40 to +150
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Value
15
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 100 °C
Tj = 125 °C
Tj = 25 °C
Tj = 100 °C
Tj = 125 °C
VR = VRRM
IF = 5 A
0.22
10
25
mA
40
100
0.47 0.52
0.43 0.49 V
0.42 0.48
To evaluate the conduction losses use the following equation:
P = 0.39 x IF(AV) + 0.028x IF2(RMS)
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Doc ID 022951 Rev 1
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