STPS6045CFSY1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS6045CFSY1 Datasheet PDF : 8 Pages
| |||
Characteristics
1
Characteristics
STPS6045HR
Table 2. Absolute maximum ratings
Symbol
Characteristic
Value
Unit
IFSM
Forward surge current (per diode)(1)
300
A
VRRM Repetitive peak reverse voltage(2)
45
V
IRRM
Repetitive peak reverse current(3)
1
A
Average output rectified current (50% duty cycle):(4) (5)
IO
per diode
per device
30
A
40
IF(RMS)
TOP
Forward rms current (per diode)
Operating temperature range(6)
(case temperature)
30
A
-65 to +175
°C
TJ
TSTG
TSOL
dV/dt
Junction temperature
Storage temperature range(6)
Soldering temperature(7)
Critical rate of rise of reverse voltage
+175
-65 to +175
+260
10000
°C
°C
°C
V/µs
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For Tcase > +138 °C per device and Tcase > +144 °C per device, derate linearly to 0 A at +175 °C.
5. The per device ratings apply only when both anode terminals are tied together.
6. For solder dip lead finish devices all testing performed at Tamb > +125 °C shall be carried out in a 100%
inert atmosphere.
7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
Characteristic
Value
Thermal resistance, junction to case
Rth(j-c)(1)
per diode
1.7
per device(2)
1.2
1. Package mounted on infinite heatsink
2. The per device ratings apply only when both anode terminals are tied togther.
Unit
°C/W
2/8
Doc ID 18184 Rev 1
Share Link: 